Vishay SiHB125N60EF Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3

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Subtotal (1 pack of 5 units)*

PHP1,031.94

(exc. VAT)

PHP1,155.775

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 95PHP206.388PHP1,031.94
100 - 495PHP200.194PHP1,000.97
500 - 995PHP192.186PHP960.93
1000 - 1495PHP182.576PHP912.88
1500 +PHP171.62PHP858.10

*price indicative

Packaging Options:
RS Stock No.:
204-7246
Mfr. Part No.:
SIHB125N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Series

SiHB125N60EF

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

31nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.06mm

Length

14.61mm

Width

9.65 mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Avalanche energy rated (UIS)

Low figure-of-merit (FOM) Ron x Qg

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