Infineon CoolMOS CFD7 Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

PHP7,880.40

(exc. VAT)

PHP8,826.05

(inc. VAT)

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  • 400 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
50 - 100PHP157.608PHP7,880.40
150 - 200PHP152.88PHP7,644.00
250 +PHP148.293PHP7,414.65

*price indicative

RS Stock No.:
214-9089
Mfr. Part No.:
IPP60R090CFD7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS CFD7

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

51nC

Maximum Gate Source Voltage Vgs

20 V

Width

4.57 mm

Length

10.36mm

Height

9.45mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.

Ultra-fast body diode

Low gate charge

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