Vishay E Type N-Channel Power MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3

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Subtotal (1 reel of 800 units)*

PHP159,815.20

(exc. VAT)

PHP178,992.80

(inc. VAT)

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800 +PHP199.769PHP159,815.20

*price indicative

RS Stock No.:
228-2841
Mfr. Part No.:
SIHB120N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 25A Continuous Drain Current - SIHB120N60E-T1-GE3


This power MOSFET is a high-voltage N-channel device designed for switching and power-conversion tasks in surface-mount assemblies. It operates across an extended temperature range and is intended for applications demanding significant voltage tolerance and thermal performance while complying with RoHS directives.

Features and Benefits:


• 650V drain-to-source withstand enables high-voltage switching
• 25A continuous drain current supports substantial load currents
• 120mΩ Rds(on) reduces conduction losses in power paths
• 179W power dissipation allows sustained thermal load handling
• 30V gate tolerance permits robust gate-drive margins
• 30nC typical gate charge for predictable switching energy

Applications


• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used for DC-DC conversion in telecom equipment
• Can be used for power-factor-correction circuits
• Appropriate for UPS and battery-management switching

What thermal range can this device tolerate during operation?


It is rated to function from -55°C up to 150°C, permitting use in demanding thermal environments.

How is the device packaged for PCB assembly?


It comes in a TO-263 surface-mount package with three terminals for efficient board mounting and heat dissipation.

What switching behaviour can I expect regarding gate drive?


With a maximum gate-source voltage of 30V and a typical gate charge of 30nC, the gate-drive requirements are moderate and predictable for common gate-driver circuits.

Is this part suitable for automotive-spec applications?


It is not designated to automotive standards, so it should not be selected where automotive certification is required.

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