Vishay E Type N-Channel MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

PHP620.53

(exc. VAT)

PHP694.995

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,995 unit(s) shipping from May 18, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
Per Pack*
5 - 45PHP124.106PHP620.53
50 - 95PHP120.38PHP601.90
100 - 245PHP113.158PHP565.79
250 - 995PHP102.972PHP514.86
1000 +PHP90.614PHP453.07

*price indicative

Packaging Options:
RS Stock No.:
228-2849
Mfr. Part No.:
SIHD11N80AE-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

78W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Related links