Vishay E Type N-Channel MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3

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Subtotal (1 pack of 5 units)*

PHP477.33

(exc. VAT)

PHP534.61

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP95.466PHP477.33
50 - 95PHP92.60PHP463.00
100 - 245PHP87.044PHP435.22
250 - 995PHP79.208PHP396.04
1000 +PHP69.702PHP348.51

*price indicative

Packaging Options:
RS Stock No.:
228-2849
Mfr. Part No.:
SIHD11N80AE-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

78W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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