Vishay E Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3
- RS Stock No.:
- 210-4979
- Mfr. Part No.:
- SIHD11N80AE-GE3
- Manufacturer:
- Vishay
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PHP663.06
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP118.404 | PHP592.02 |
| 10 - 95 | PHP106.562 | PHP532.81 |
| 100 - 495 | PHP95.904 | PHP479.52 |
| 500 - 995 | PHP86.31 | PHP431.55 |
| 1000 + | PHP77.68 | PHP388.40 |
*price indicative
- RS Stock No.:
- 210-4979
- Mfr. Part No.:
- SIHD11N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 391mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 78W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.4mm | |
| Standards/Approvals | RoHS | |
| Length | 9.4mm | |
| Height | 2.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 391mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 78W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 6.4mm | ||
Standards/Approvals RoHS | ||
Length 9.4mm | ||
Height 2.2mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 8A Continuous Drain Current - SIHD11N80AE-GE3
This power MOSFET is a high-voltage N-channel enhancement-mode transistor intended for switching and power conversion in industrial electronic systems. It is supplied in a surface-mount TO-252 package and is designed to operate across a wide temperature range suitable for demanding environments. Key electrical limits and thermal handling allow use in circuits requiring elevated voltage tolerance and moderate continuous current capability.
Features and Benefits:
• 800V drain rating enables high-voltage switching applications • 8A continuous drain current supports steady-state load handling • 391mΩ Rds(on) reduces conduction losses for efficiency gains • 28nC typical gate charge minimises switching energy consumption • 78W power dissipation capability aids thermal margin in assemblies
Applications
• Suitable for primary-side switching in SMPS for industrial equipment • Ideal for high-voltage DC-DC conversion stages in power supplies • Used for inverter front-end switching in industrial motor drives • Can be used for snubber or clamp circuits in high-voltage systems
What gate drive considerations are required for reliable switching?
The device can tolerate gate voltages up to 30V, so gate drivers should provide appropriate Vgs levels while limiting transients to prevent overstress.
How does temperature affect allowable operation?
The component is rated to operate from -55°C up to 150°C
designers should account for derating of current and thermal resistance in elevated temperature conditions.
What package and mounting style does it use for PCB design?
It is supplied in a TO-252 surface-mount package with three pins, allowing soldered attachment to board copper and use of PCB thermal land patterns for heat dissipation.
What switching performance trade-offs should be expected?
Its moderate gate charge of 28nC balances switching speed and drive energy, while the relatively high Rds(on) implies higher conduction losses compared with low-resistance devices, which should be considered for efficiency budgets.
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