Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247

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Bulk discount available

Subtotal (1 tube of 25 units)*

PHP3,087.00

(exc. VAT)

PHP3,457.50

(inc. VAT)

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  • 1,500 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
25 - 25PHP123.48PHP3,087.00
50 +PHP111.788PHP2,794.70

*price indicative

RS Stock No.:
210-4981
Mfr. Part No.:
SIHG11N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

78W

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

45.3mm

Width

15.5 mm

Height

4.83mm

Automotive Standard

No

The Vishay E Series Power MOSFET has TO-247AC package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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