Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- RS Stock No.:
- 210-4971
- Mfr. Part No.:
- SIHB17N80AE-GE3
- Manufacturer:
- Vishay
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PHP5,771.50
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PHP6,464.00
(inc. VAT)
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP115.43 | PHP5,771.50 |
| 100 + | PHP104.487 | PHP5,224.35 |
*price indicative
- RS Stock No.:
- 210-4971
- Mfr. Part No.:
- SIHB17N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.06mm | |
| Length | 14.61mm | |
| Standards/Approvals | RoHS | |
| Width | 9.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 4.06mm | ||
Length 14.61mm | ||
Standards/Approvals RoHS | ||
Width 9.65mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 15A Continuous Drain Current - SIHB17N80AE-GE3
This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion duties in surface-mount applications. It operates across a wide temperature range and is intended for use where robust high-voltage switching, moderate current handling and compact SMD packaging are required.
Features and Benefits:
• 800V maximum drain-source voltage enabling high-voltage switching
• 15A continuous drain current for moderate load handling
• 250mΩ Rds(on) minimises conduction losses under load
• 179W power dissipation supports high-power operation
• 41nC typical gate charge for predictable switching behaviour
• 30V maximum gate-source voltage ensures gate drive margin
• 15A continuous drain current for moderate load handling
• 250mΩ Rds(on) minimises conduction losses under load
• 179W power dissipation supports high-power operation
• 41nC typical gate charge for predictable switching behaviour
• 30V maximum gate-source voltage ensures gate drive margin
Applications
• Suitable for SMPS primary-side high-voltage switching
• Ideal for industrial high-voltage power stages
• Used with boost converters requiring 800V devices
• Can be used for power-factor correction front ends
• Ideal for industrial high-voltage power stages
• Used with boost converters requiring 800V devices
• Can be used for power-factor correction front ends
What thermal extremes can this device withstand in operation?
It is specified to operate from -55°C up to 150°C, allowing use in environments with large temperature variations.
What package and mounting style should I plan for on the board?
The device is supplied in a TO-263 package intended for surface mounting to heatsinking areas on the board.
How many electrical connections does it present for layout considerations?
The component has three pins, corresponding to the gate, drain and source terminations for PCB routing.
What is the channel mode and how does it affect switching?
The transistor is an enhancement-mode N-channel device, requiring a positive gate drive relative to the source to switch on.
Related links
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
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- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SIHP17N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263