Vishay E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3

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Subtotal (1 pack of 5 units)*

PHP917.23

(exc. VAT)

PHP1,027.30

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP183.446PHP917.23
10 - 95PHP165.10PHP825.50
100 - 495PHP148.588PHP742.94
500 - 995PHP133.73PHP668.65
1000 +PHP120.358PHP601.79

*price indicative

Packaging Options:
RS Stock No.:
210-4972
Mfr. Part No.:
SIHB17N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

41nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.06mm

Length

14.61mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 15 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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