Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3
- RS Stock No.:
- 204-7229
- Mfr. Part No.:
- SIHU5N80AE-GE3
- Manufacturer:
- Vishay
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PHP638.00
(exc. VAT)
PHP714.60
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP63.80 | PHP638.00 |
| 100 - 490 | PHP61.886 | PHP618.86 |
| 500 - 990 | PHP59.41 | PHP594.10 |
| 1000 - 1490 | PHP56.441 | PHP564.41 |
| 1500 + | PHP53.055 | PHP530.55 |
*price indicative
- RS Stock No.:
- 204-7229
- Mfr. Part No.:
- SIHU5N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 2.39mm | |
| Standards/Approvals | RoHS | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 2.39mm | ||
Standards/Approvals RoHS | ||
Height 6.22mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 4.4A Maximum Continuous Drain Current - SIHU5N80AE-GE3
This power MOSFET is a high-voltage N-channel enhancement-mode device designed for switching and power conversion in industrial and electronic systems. It is supplied in a through-hole IPAK package intended for robust board mounting and straightforward installation in control and power assemblies. The device is appropriate where elevated drain-to-source voltage capability and moderate current handling are required.
Features and Benefits:
• 800V Vds rating enabling high-voltage switching applications • 4.4A continuous drain current for moderate load delivery • 1.35Ω Rds(on) minimises conduction losses under load • 62.5W power dissipation supports sustained thermal loading • 16.5nC typical gate charge for predictable switching control • 150°C maximum operating temperature for high-temperature environments
Applications
• Suitable for high-voltage power supplies and converters • Ideal for industrial motor drive front-ends • Used for mains-side switching in lighting controls • Can be used for snubber or clamp circuits in power modules • Suitable for prototyping and repair in through-hole assemblies
What gate voltage range should I apply for safe operation?
The device accepts up to 30V between gate and source
designs typically use gate drive levels compatible with that maximum to avoid gate overstress.
How does the gate charge affect driver selection?
A 16.5nC gate charge at the rated gate drive determines required driver current and switching losses
choose a driver capable of sourcing sufficient Peak current for desired switching speed.
What environmental temperatures can it withstand during operation?
It is specified to operate down to -55°C and up to 150°C, so thermal management and junction-to-ambient considerations remain important at elevated temperatures.
Which mounting style does it require on the PCB?
It is a through-hole component in an IPAK body, so designs must include appropriate drill holes and solder pads for mechanical stability and heat transfer.
Related links
- Vishay SiHU5N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
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- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
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