Vishay SiHU5N80AE Type N-Channel MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3
- RS Stock No.:
- 204-7229
- Mfr. Part No.:
- SIHU5N80AE-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP367.50
(exc. VAT)
PHP411.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 20 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP36.75 | PHP367.50 |
| 100 - 490 | PHP35.648 | PHP356.48 |
| 500 - 990 | PHP34.222 | PHP342.22 |
| 1000 - 1490 | PHP32.511 | PHP325.11 |
| 1500 + | PHP30.56 | PHP305.60 |
*price indicative
- RS Stock No.:
- 204-7229
- Mfr. Part No.:
- SIHU5N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SiHU5N80AE | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Width | 2.39 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SiHU5N80AE | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 6.22mm | ||
Width 2.39 mm | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Related links
- Vishay SiHU5N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
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- Vishay E Type N-Channel MOSFET 800 V, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3