Vishay SiHU5N80AE Type N-Channel MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3

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Subtotal (1 pack of 10 units)*

PHP606.10

(exc. VAT)

PHP678.80

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 90PHP60.61PHP606.10
100 - 490PHP58.792PHP587.92
500 - 990PHP56.44PHP564.40
1000 - 1490PHP53.619PHP536.19
1500 +PHP50.402PHP504.02

*price indicative

Packaging Options:
RS Stock No.:
204-7229
Mfr. Part No.:
SIHU5N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Series

SiHU5N80AE

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16.5nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Height

6.22mm

Automotive Standard

No

The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

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