MPN

Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK

RS Stock No.:: 188-4879
Mfr. Part No.:: SIHU4N80AE-GE3
Manufacturer:: Vishay

Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 75 units)*

PHP4,909.80

(exc. VAT)

PHP5,499.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from May 11, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Tube*
75 - 75	PHP65.464	PHP4,909.80
150 - 450	PHP58.918	PHP4,418.85
525 - 975	PHP53.026	PHP3,976.95
1050 - 2475	PHP47.723	PHP3,579.23
2550 +	PHP42.951	PHP3,221.33

*price indicative

RS Stock No.:: 188-4879
Mfr. Part No.:: SIHU4N80AE-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	800V
	Package Type	IPAK
	Series	SiHU4N80AE
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.44Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Power Dissipation Pd	62.5W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.73mm
	Width	2.38 mm
	Height	6.22mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 800V
	Package Type IPAK
	Series SiHU4N80AE
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.44Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Power Dissipation Pd 62.5W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.73mm
	Width 2.38 mm
	Height 6.22mm
	Automotive Standard No

Datasheet SIHU4N80AE-GE3

E Series Power MOSFET

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK

FREE delivery for orders over ₱3,000.00

Related links