MPN

Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3

RS Stock No.:: 188-4943
Mfr. Part No.:: SIHU4N80AE-GE3
Manufacturer:: Vishay

Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

PHP397.88

(exc. VAT)

PHP445.625

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from May 08, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
5 - 5	PHP79.576	PHP397.88
10 - 20	PHP70.064	PHP350.32
25 - 45	PHP65.098	PHP325.49
50 +	PHP63.784	PHP318.92

*price indicative

RS Stock No.:: 188-4943
Mfr. Part No.:: SIHU4N80AE-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	800V
	Series	SiHU4N80AE
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.44Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	11nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	62.5W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Height	6.22mm
	Width	2.38 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 800V
	Series SiHU4N80AE
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.44Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 11nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 62.5W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Height 6.22mm
	Width 2.38 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet SIHU4N80AE-GE3

E Series Power MOSFET

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3

FREE delivery for orders over ₱3,000.00

Related links