Vishay SiHU5N80AE Type N-Channel MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP108,075.00

(exc. VAT)

PHP121,044.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from May 11, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 +PHP36.025PHP108,075.00

*price indicative

RS Stock No.:
204-7228
Mfr. Part No.:
SIHU5N80AE-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Package Type

IPAK

Series

SiHU5N80AE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16.5nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Width

2.39 mm

Height

6.22mm

Automotive Standard

No

The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Related links