Vishay IRFBE30 Type N-Channel Power MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF

RS Stock No.:: 541-1124
Distrelec Article No.:: 171-15-208
Mfr. Part No.:: IRFBE30PBF
Manufacturer:: Vishay

Vishay IRFBE30 Type N-Channel Power MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF

This image is representative of the product range

Subtotal (1 unit)*

PHP149.63

(exc. VAT)

PHP167.59

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 137 unit(s) shipping from August 10, 2026
Plus 1,282 unit(s) shipping from August 17, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit
1 +	PHP149.63

*price indicative

RS Stock No.:: 541-1124
Distrelec Article No.:: 171-15-208
Mfr. Part No.:: IRFBE30PBF
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-220AB
	Series	IRFBE30
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	78nC
	Forward Voltage Vf	1.8V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	9.01mm
	Length	10.41mm
	Standards/Approvals	RoHS
	Width	4.7mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-220AB
	Series IRFBE30
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 78nC
	Forward Voltage Vf 1.8V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 9.01mm
	Length 10.41mm
	Standards/Approvals RoHS
	Width 4.7mm
	Automotive Standard No

Vishay IRFBE30 Series Power MOSFET, 800V Drain‑Source Voltage, 4.1A Continuous Drain Current - IRFBE30PBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification tasks in demanding electronic systems. It operates across a broad temperature span and is supplied in a through-hole TO-220AB package with three pins, making it suitable for serviceable power designs where thermal handling and ease of mounting are priorities.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching
• 4.1A continuous drain current supports moderate load currents
• 125W power dissipation allows substantial heat handling
• 3Ω maximum Rds(on) simplifies drive requirements at low switching speeds
• 78nC typical gate charge reduces gate-drive energy demands
• 20V gate-source limit protects gate under normal control voltages

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power in instrumentation
• Used with discrete linear regulators requiring high Vds
• Can be used for industrial motor control at moderate currents
• Suitable for through-hole prototypes and repair work

What temperature extremes can it withstand in operation?

It is specified to operate from -55°C up to 150°C, supporting applications exposed to wide ambient variations.

How is the component mounted and connected on a circuit?

It uses a through-hole TO-220AB package with three pins for straightforward PCB mounting and conventional heatsinking attachment.

What gate-drive considerations should be observed?

Keep the gate-drive amplitude within a 20V maximum to avoid exceeding the gate-source voltage rating and design drive circuitry to supply gate charge around 78nC for effective switching.

What type of conduction mode does it employ?

It is an enhancement-mode N-channel device, requiring a positive gate voltage relative to source to conduct.