N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

RS Stock No.:: 541-1124
Mfr. Part No.:: IRFBE30PBF
Manufacturer:: Vishay

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

This image is representative of the product range

Price Each

PHP105.45

(exc. VAT)

PHP118.10

(inc. VAT)

150 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit
1 +	PHP105.45

RS Stock No.:: 541-1124
Mfr. Part No.:: IRFBE30PBF
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.1 A
Maximum Drain Source Voltage	800 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.7mm
Length	10.41mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	78 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	9.01mm

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

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