Vishay IRFBE Type N-Channel MOSFET, 1.8 A, 800 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 542-9535
- Mfr. Part No.:
- IRFBE20PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP52.86
(exc. VAT)
PHP59.20
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Being discontinued
- 5 left, ready to ship from another location
- Final 761 unit(s) shipping from January 01, 2026
Units | Per Unit |
|---|---|
| 1 - 9 | PHP52.86 |
| 10 - 49 | PHP51.28 |
| 50 - 99 | PHP49.74 |
| 100 - 249 | PHP48.25 |
| 250 + | PHP46.81 |
*price indicative
- RS Stock No.:
- 542-9535
- Mfr. Part No.:
- IRFBE20PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | IRFBE | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 54W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7 mm | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series IRFBE | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 54W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7 mm | ||
Length 10.41mm | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRFBE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IRFBE20PBF
- Vishay IRFBE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Vishay IRFBE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IRFBE30PBF
- Vishay IRFBE Type N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB
- Vishay IRFBE Type N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB
- Vishay IRFBE Type N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB IRFBF30PBF
- Vishay IRFBE Type N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB IRFBF20PBF
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3