P-Channel MOSFET, 1.8 A, 200 V, 3-Pin TO-220AB Vishay IRF9610PBF
- RS Stock No.:
- 542-9462
- Mfr. Part No.:
- IRF9610PBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 unit)**
PHP78.05
(exc. VAT)
PHP87.42
(inc. VAT)
79 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit |
---|---|
1 - 9 | PHP78.05 |
10 - 49 | PHP75.70 |
50 - 99 | PHP73.42 |
100 - 249 | PHP71.21 |
250 + | PHP69.08 |
**price indicative
- RS Stock No.:
- 542-9462
- Mfr. Part No.:
- IRF9610PBF
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 1.8 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Length | 10.41mm | |
Width | 4.7mm | |
Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 9.01mm | |
Select all | ||
---|---|---|
Manufacturer Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.41mm | ||
Width 4.7mm | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.01mm | ||
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