Vishay IRF Type P-Channel MOSFET, 1.8 A, 200 V Enhancement, 3-Pin TO-220

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PHP69.16

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PHP77.46

(inc. VAT)

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1 - 9PHP69.16
10 - 49PHP67.08
50 - 99PHP65.06
100 - 249PHP63.10
250 +PHP61.21

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Packaging Options:
RS Stock No.:
542-9462
Mfr. Part No.:
IRF9610PBF
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

IRF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

-5.8V

Maximum Operating Temperature

150°C

Height

9.01mm

Width

4.7 mm

Length

10.41mm

Standards/Approvals

No

Automotive Standard

No

The Vishay power MOSFETs technology is the key to advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating

Ease of paralleling

Simple drive requirements

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