Vishay IRF Type P-Channel MOSFET, 4 A, 100 V Enhancement, 3-Pin TO-220

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PHP36.37

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PHP40.73

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1 - 9PHP36.37
10 - 49PHP35.27
50 - 99PHP34.21
100 - 249PHP33.18
250 +PHP32.18

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Packaging Options:
RS Stock No.:
543-0018
Mfr. Part No.:
IRF9510PBF
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

IRF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

43W

Forward Voltage Vf

-5.5V

Maximum Operating Temperature

175°C

Height

9.01mm

Standards/Approvals

No

Width

4.7 mm

Length

10.41mm

Automotive Standard

No

The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating

Repetitive avalanche rated

Simple drive requirements

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