Vishay IRF Type P-Channel MOSFET, 6.8 A, 100 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-0026
- Mfr. Part No.:
- IRF9520PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP1,967.00
(exc. VAT)
PHP2,203.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 1,000 unit(s) shipping from January 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP39.34 | PHP1,967.00 |
| 100 - 100 | PHP38.159 | PHP1,907.95 |
| 150 - 250 | PHP37.015 | PHP1,850.75 |
| 300 - 400 | PHP35.904 | PHP1,795.20 |
| 450 + | PHP34.827 | PHP1,741.35 |
*price indicative
- RS Stock No.:
- 919-0026
- Mfr. Part No.:
- IRF9520PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | IRF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -6.3V | |
| Maximum Power Dissipation Pd | 60W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Height | 9.01mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series IRF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -6.3V | ||
Maximum Power Dissipation Pd 60W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Height 9.01mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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