Vishay E Type N-Channel Power MOSFET, 30 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3

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Subtotal (1 pack of 2 units)*

PHP494.21

(exc. VAT)

PHP553.516

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP247.105PHP494.21
10 - 18PHP205.03PHP410.06
20 +PHP200.745PHP401.49

*price indicative

Packaging Options:
RS Stock No.:
188-4970
Mfr. Part No.:
SIHA100N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.1Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

33nC

Maximum Operating Temperature

150°C

Width

4.7 mm

Height

15.3mm

Standards/Approvals

No

Length

10.3mm

Automotive Standard

No

E Series Power MOSFET.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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