Vishay E Type N-Channel Power MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-220AB SIHP690N60E-GE3
- RS Stock No.:
- 200-6821
- Mfr. Part No.:
- SIHP690N60E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 pack of 25 units)*
PHP2,157.50
(exc. VAT)
PHP2,416.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
- 25 unit(s) shipping from August 10, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 + | PHP86.30 | PHP2,157.50 |
*price indicative
- RS Stock No.:
- 200-6821
- Mfr. Part No.:
- SIHP690N60E-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 6.4A Maximum Continuous Drain Current - SIHP690N60E-GE3
Features and Benefits:
• 6.4A continuous drain current supports moderate load currents
• 700mΩ Rds(on) minimises conduction losses under load
• 62.5W power dissipation allows substantial thermal handling
• 12nC gate charge reduces driving energy for faster switching
• 30V gate-source tolerance permits flexible gate drive levels
Applications
• Ideal for motor-drive gate stage and inverter switching
• Used with discrete switch-mode power supplies in industrial equipment
• Can be used for lab prototypes requiring through-hole mounting
• Appropriate for driver stages in high-voltage lighting control
What temperature range can it tolerate in demanding installations?
What mounting and cooling options are compatible with it?
How does its gate charge affect driver selection?
Is it suitable for automotive-grade applications?
Related links
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHP690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 SIHD690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
