Vishay E Type N-Channel MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-252 SIHD690N60E-GE3

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Subtotal (1 reel of 3000 units)*

PHP145,506.00

(exc. VAT)

PHP162,966.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP48.502PHP145,506.00

*price indicative

RS Stock No.:
200-6828
Mfr. Part No.:
SIHD690N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHD690N60E-GE3 is a E Series power MOSFET.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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