Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 25 units)*

PHP4,655.95

(exc. VAT)

PHP5,214.675

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 425 unit(s), ready to ship from another location
Units
Per Unit
Per Tube*
25 - 75PHP186.238PHP4,655.95
100 - 475PHP180.651PHP4,516.28
500 - 975PHP173.426PHP4,335.65
1000 - 2475PHP164.755PHP4,118.88
2500 +PHP154.87PHP3,871.75

*price indicative

RS Stock No.:
228-2863
Mfr. Part No.:
SiHG080N60E-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

227W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Related links