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Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3

RS Stock No.:: 903-4490
Mfr. Part No.:: SiHF30N60E-GE3
Manufacturer:: Vishay

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3

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Subtotal (1 pack of 2 units)*

PHP889.58

(exc. VAT)

PHP996.32

(inc. VAT)

FREE delivery for orders over ₱5,000.00

Last RS stock

Final 800 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
2 - 8	PHP444.79	PHP889.58
10 - 38	PHP319.865	PHP639.73
40 - 98	PHP313.26	PHP626.52
100 - 198	PHP307.05	PHP614.10
200 +	PHP300.42	PHP600.84

*price indicative

RS Stock No.:: 903-4490
Mfr. Part No.:: SiHF30N60E-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Series	E
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	37W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	85nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.63mm
	Height	16.12mm
	Width	4.83mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Series E
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 37W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 85nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.63mm
	Height 16.12mm
	Width 4.83mm
	Automotive Standard No

COO (Country of Origin):: CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor

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