N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

RS Stock No.:: 768-9310
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)**

PHP326.26

(exc. VAT)

PHP365.41

(inc. VAT)

514 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit
1 - 9	PHP326.26
10 - 49	PHP309.58
50 - 99	PHP263.20
100 - 249	PHP257.39
250 +	PHP251.57

**price indicative

RS Stock No.:: 768-9310
Mfr. Part No.:: SIHB30N60E-GE3
Manufacturer:: Vishay

SiHB30N60E, E Series Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Series	E Series
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.67mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	85 nC @ 10 V
Width	9.65mm
Height	4.83mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

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