Vishay Isolated TrenchFET 2 N-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC SQ4920EY-T1_GE3

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RS Stock No.:
170-8297
Mfr. Part No.:
SQ4920EY-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.7nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

750mV

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Power Dissipation Pd

4.4W

Transistor Configuration

Isolated

Maximum Operating Temperature

175°C

Width

4mm

Length

5mm

Height

1.5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Dual N-Channel MOSFET, Vishay Semiconductor


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