Dual N/P-Channel-Channel MOSFET, 7.2 A, 8 A, 40 V, 8-Pin SOIC Vishay SI4564DY-T1-GE3

RS Stock No.:: 812-3230
Mfr. Part No.:: SI4564DY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 7.2 A, 8 A, 40 V, 8-Pin SOIC Vishay SI4564DY-T1-GE3

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Subtotal (1 pack of 10 units)**

PHP641.52

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PHP718.50

(inc. VAT)

33390 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

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Units	Per Unit	Per Pack**
10 - 10	PHP64.152	PHP641.52
20 - 40	PHP62.228	PHP622.28
50 - 90	PHP60.363	PHP603.63
100 - 190	PHP58.551	PHP585.51
200 +	PHP56.792	PHP567.92

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RS Stock No.:: 812-3230
Mfr. Part No.:: SI4564DY-T1-GE3
Manufacturer:: Vishay

Si4564DY, N- and P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	7.2 A, 8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	20 mΩ, 28 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.8V
Maximum Power Dissipation	3.1 W, 3.2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, -16 V, +16 V, +20 V
Number of Elements per Chip	2
Length	5mm
Typical Gate Charge @ Vgs	20.5 nC @ 10 V, 41.5 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	4mm
Minimum Operating Temperature	-55 °C
Height	1.55mm

Dual N/P-Channel-Channel MOSFET, 7.2 A, 8 A, 40 V, 8-Pin SOIC Vishay SI4564DY-T1-GE3

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Dual N/P-Channel MOSFET, Vishay Semiconductor

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