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Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

RS Stock No.:: 818-1302
Mfr. Part No.:: SI4909DY-T1-GE3
Manufacturer:: Vishay

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 20 units)*

PHP1,099.46

(exc. VAT)

PHP1,231.40

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

4,940 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
20 - 20	PHP54.973	PHP1,099.46
40 - 80	PHP48.625	PHP972.50
100 - 180	PHP45.803	PHP916.06
200 - 380	PHP40.991	PHP819.82
400 +	PHP39.504	PHP790.08

*price indicative

RS Stock No.:: 818-1302
Mfr. Part No.:: SI4909DY-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	6.5A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	34mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	41.5nC
	Maximum Power Dissipation Pd	3.2W
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Width	4 mm
	Standards/Approvals	No
	Length	5mm
	Height	1.55mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 6.5A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 34mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 41.5nC
	Maximum Power Dissipation Pd 3.2W
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Width 4 mm
	Standards/Approvals No
	Length 5mm
	Height 1.55mm
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

FREE delivery for orders over ₱3,000.00

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