Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3

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Subtotal (1 tape of 50 units)*

PHP984.90

(exc. VAT)

PHP1,103.10

(inc. VAT)

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Per Unit
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50 - 50PHP19.698PHP984.90
100 - 200PHP17.17PHP858.50
250 - 450PHP15.975PHP798.75
500 - 950PHP15.964PHP798.20
1000 +PHP15.954PHP797.70

*price indicative

Packaging Options:
RS Stock No.:
812-3108
Mfr. Part No.:
SI1967DH-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1.1A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SC-88

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

790mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

2.6nC

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.25W

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

No

Width

1.35 mm

Height

1mm

Length

2.2mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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