Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

RS Stock No.:: 165-6930
Mfr. Part No.:: SI1922EDH-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

This image is representative of the product range

Price Each (On a Reel of 3000)

PHP10.939

(exc. VAT)

PHP12.252

(inc. VAT)

3050 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Reel**
3000 +	PHP10.939	PHP32,817.00

**price indicative

RS Stock No.:: 165-6930
Mfr. Part No.:: SI1922EDH-T1-GE3
Manufacturer:: Vishay

Si1922EDH, Dual N-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	263 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Width	1.35mm
Typical Gate Charge @ Vgs	1.6 nC @ 8 V
Length	2.2mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	1mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor

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