Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 1.3 A, 20 V Enhancement, 6-Pin SC-88 SI1922EDH-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 50 units)*

PHP857.50

(exc. VAT)

PHP960.50

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
50 - 50PHP17.15PHP857.50
100 - 200PHP16.635PHP831.75
250 - 450PHP16.136PHP806.80
500 - 950PHP15.652PHP782.60
1000 +PHP15.183PHP759.15

*price indicative

Packaging Options:
RS Stock No.:
812-3091
Mfr. Part No.:
SI1922EDH-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.3A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-88

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

263mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.6nC

Maximum Power Dissipation Pd

1.25W

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Height

1mm

Width

1.35 mm

Standards/Approvals

No

Length

2.2mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links