Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP468.44

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PHP524.66

(inc. VAT)

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20 - 140PHP23.422PHP468.44
160 - 740PHP22.485PHP449.70
760 - 1480PHP21.548PHP430.96
1500 +PHP21.079PHP421.58

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Packaging Options:
RS Stock No.:
787-9055
Mfr. Part No.:
SI1029X-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SC-89-6

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

750nC

Maximum Power Dissipation Pd

250mW

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

±20 V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Length

1.7mm

Standards/Approvals

No

Width

1.7 mm

Height

0.6mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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