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    Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

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    Subtotal (1 reel of 3000 units)**

    PHP40,860.00

    (exc. VAT)

    PHP45,750.00

    (inc. VAT)

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    Temporarily out of stock - back order for despatch 17/07/2025, delivery within 10 working days from desptach date*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Reel**
    3000 +PHP13.62PHP40,860.00

    **price indicative

    RS Stock No.:
    145-2681
    Mfr. Part No.:
    SI1967DH-T1-GE3
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    P

    Maximum Continuous Drain Current

    1.1 A

    Maximum Drain Source Voltage

    20 V

    Package Type

    SOT-363

    Mounting Type

    Surface Mount

    Pin Count

    6

    Maximum Drain Source Resistance

    790 mΩ

    Channel Mode

    Enhancement

    Minimum Gate Threshold Voltage

    0.4V

    Maximum Power Dissipation

    1.25 W

    Transistor Configuration

    Isolated

    Maximum Gate Source Voltage

    -8 V, +8 V

    Typical Gate Charge @ Vgs

    2.6 nC @ 8 V

    Length

    2.2mm

    Maximum Operating Temperature

    +150 °C

    Transistor Material

    Si

    Number of Elements per Chip

    2

    Width

    1.35mm

    Minimum Operating Temperature

    -55 °C

    Height

    1mm

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