Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70 SIA517DJ-T1-GE3
- RS Stock No.:
- 814-1225
- Mfr. Part No.:
- SIA517DJ-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP575.70
(exc. VAT)
PHP644.78
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from April 13, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP28.785 | PHP575.70 |
| 40 - 80 | PHP27.723 | PHP554.46 |
| 100 - 180 | PHP27.457 | PHP549.14 |
| 200 - 380 | PHP27.147 | PHP542.94 |
| 400 + | PHP26.881 | PHP537.62 |
*price indicative
- RS Stock No.:
- 814-1225
- Mfr. Part No.:
- SIA517DJ-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SC-70 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 6.5W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Length | 2.15mm | |
| Width | 2.15 mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SC-70 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 6.5W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Length 2.15mm | ||
Width 2.15 mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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