Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

PHP85,645.00

(exc. VAT)

PHP95,922.50

(inc. VAT)

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  • 2,500 unit(s) ready to ship from another location
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Units
Per Unit
Per Reel*
2500 +PHP34.258PHP85,645.00

*price indicative

RS Stock No.:
165-6282
Mfr. Part No.:
SI4909DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41.5nC

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.2W

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Length

5mm

Height

1.55mm

Width

4 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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