Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

RS Stock No.:: 165-6282
Mfr. Part No.:: SI4909DY-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

This image is representative of the product range

Price Each (On a Reel of 2500)

PHP31.99

(exc. VAT)

PHP35.83

(inc. VAT)

5320 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Reel**
2500 +	PHP31.99	PHP79,975.00

**price indicative

RS Stock No.:: 165-6282
Mfr. Part No.:: SI4909DY-T1-GE3
Manufacturer:: Vishay

Si4909DY, Dual P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	6.5 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	34 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3.2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Width	4mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	41.5 nC @ 10 V
Length	5mm
Minimum Operating Temperature	-55 °C
Height	1.55mm

Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

FREE delivery for over PHP7,000.00 (ex VAT)

Dual P-Channel MOSFET, Vishay Semiconductor

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