Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

PHP43,255.00

(exc. VAT)

PHP48,445.00

(inc. VAT)

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Units
Per Unit
Per Reel*
2500 +PHP17.302PHP43,255.00

*price indicative

RS Stock No.:
165-2751
Mfr. Part No.:
SI9933CDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

58mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17nC

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

1.55mm

Standards/Approvals

No

Length

5mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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