Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 3.1 A, 60 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 919-4198
- Mfr. Part No.:
- SI4948BEY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP100,827.50
(exc. VAT)
PHP112,927.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Being discontinued
- Final 2,500 unit(s), ready to ship from another location
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP40.331 | PHP100,827.50 |
| 5000 - 5000 | PHP39.484 | PHP98,710.00 |
| 7500 - 12500 | PHP38.932 | PHP97,330.00 |
| 15000 - 20000 | PHP37.115 | PHP92,787.50 |
| 22500 + | PHP35.491 | PHP88,727.50 |
*price indicative
- RS Stock No.:
- 919-4198
- Mfr. Part No.:
- SI4948BEY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -0.8V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 175°C | |
| Width | 4 mm | |
| Length | 5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -0.8V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 175°C | ||
Width 4 mm | ||
Length 5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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