Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

RS Stock No.:: 919-0297
Mfr. Part No.:: SI4559ADY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

Bulk discount available

Subtotal (1 reel of 2500 units)**

PHP134,640.00

(exc. VAT)

PHP150,797.50

(inc. VAT)

2500 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP3,000.00 (ex VAT)

Real time qty checker

Units	Per Unit	Per Reel**
2500 - 2500	PHP53.856	PHP134,640.00
5000 - 5000	PHP52.836	PHP132,090.00
7500 - 12500	PHP51.816	PHP129,540.00
15000 - 20000	PHP50.796	PHP126,990.00
22500 +	PHP49.776	PHP124,440.00

**price indicative

RS Stock No.:: 919-0297
Mfr. Part No.:: SI4559ADY-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	3.9 A, 5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ, 150 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W, 3.4 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	13 nC @ 30 V, 14.5 nC @ 30 V
Length	5mm
Number of Elements per Chip	2
Transistor Material	Si
Width	4mm
Maximum Operating Temperature	+150 °C
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

FREE delivery for over PHP3,000.00 (ex VAT)

Dual N/P-Channel MOSFET, Vishay Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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