Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4554DY-T1-GE3
- RS Stock No.:
- 787-9238
- Mfr. Part No.:
- SI4554DY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP406.99
(exc. VAT)
PHP455.83
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 15,300 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP40.699 | PHP406.99 |
| 20 - 40 | PHP39.477 | PHP394.77 |
| 50 - 90 | PHP38.293 | PHP382.93 |
| 100 - 190 | PHP37.142 | PHP371.42 |
| 200 + | PHP36.028 | PHP360.28 |
*price indicative
- RS Stock No.:
- 787-9238
- Mfr. Part No.:
- SI4554DY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Minimum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Minimum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 5mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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