Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC SQ4920EY-T1_GE3

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Subtotal (1 tape of 5 units)*

PHP542.82

(exc. VAT)

PHP607.96

(inc. VAT)

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Units
Per Unit
Per Tape*
5 - 20PHP108.564PHP542.82
25 - 45PHP105.032PHP525.16
50 - 245PHP100.904PHP504.52
250 - 495PHP97.372PHP486.86
500 +PHP96.782PHP483.91

*price indicative

Packaging Options:
RS Stock No.:
787-9462
Mfr. Part No.:
SQ4920EY-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.7nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

4.4W

Forward Voltage Vf

0.75V

Transistor Configuration

Isolated

Maximum Operating Temperature

175°C

Length

5mm

Standards/Approvals

No

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Dual N-Channel MOSFET, Vishay Semiconductor


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