Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3

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Subtotal (1 pack of 10 units)*

PHP696.96

(exc. VAT)

PHP780.60

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP69.696PHP696.96
20 - 40PHP67.604PHP676.04
50 - 90PHP63.548PHP635.48
100 - 190PHP57.828PHP578.28
200 +PHP50.89PHP508.90

*price indicative

Packaging Options:
RS Stock No.:
818-1390
Mfr. Part No.:
SI7288DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

15.6W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

10nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Width

5 mm

Standards/Approvals

No

Length

5.99mm

Height

1.07mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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