Vishay Isolated TrenchFET 2 N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3
- RS Stock No.:
- 818-1390
- Mfr. Part No.:
- SI7288DP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 818-1390
- Mfr. Part No.:
- SI7288DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Power Dissipation Pd | 15.6W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Width | 5mm | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Power Dissipation Pd 15.6W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Width 5mm | ||
Height 1.07mm | ||
Length 5.99mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 20 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 20 V Enhancement, 8-Pin SOIC SI9933CDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P 4.5 A 6-Pin SC-70