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Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3

RS Stock No.:: 710-3327
Mfr. Part No.:: SI4214DDY-T1-GE3
Manufacturer:: Vishay

Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

PHP235.89

(exc. VAT)

PHP264.195

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

2,465 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
5 - 20	PHP47.178	PHP235.89
25 - 95	PHP46.00	PHP230.00
100 - 245	PHP44.848	PHP224.24
250 - 495	PHP43.726	PHP218.63
500 +	PHP42.63	PHP213.15

*price indicative

RS Stock No.:: 710-3327
Mfr. Part No.:: SI4214DDY-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	7.5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	19.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	14.5nC
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Standards/Approvals	No
	Height	1.5mm
	Width	4 mm
	Length	5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 7.5A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 19.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 14.5nC
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Standards/Approvals No
	Height 1.5mm
	Width 4 mm
	Length 5mm
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3

FREE delivery for orders over ₱3,000.00

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