Infineon IQD0 Type N-Channel MOSFET, 151 A, 150 V Enhancement, 8-Pin PG-WHSON-8 IQD063N15NM5SCATMA1

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PHP831.75

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PHP931.56

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Units
Per Unit
Per Pack*
2 - 18PHP415.875PHP831.75
20 - 198PHP374.415PHP748.83
200 - 998PHP345.18PHP690.36
1000 - 1998PHP320.305PHP640.61
2000 +PHP287.14PHP574.28

*price indicative

RS Stock No.:
351-914
Mfr. Part No.:
IQD063N15NM5SCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

151A

Maximum Drain Source Voltage Vds

150V

Series

IQD0

Package Type

PG-WHSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.32mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

333W

Typical Gate Charge Qg @ Vgs

48nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Height

0.75mm

Length

5mm

Standards/Approvals

RoHS, JEDEC, Halogen‐Free According to IEC61249‐2‐21

Width

6 mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.

Cutting edge 150 V silicon technology

Outstanding FOMs

Improved thermal performance

Ultra-low parasitic

Maximized chip or package ratio

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