Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1

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Subtotal (1 reel of 6000 units)*

PHP703,482.00

(exc. VAT)

PHP787,902.00

(inc. VAT)

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Units
Per Unit
Per Reel*
6000 +PHP117.247PHP703,482.00

*price indicative

RS Stock No.:
284-759
Mfr. Part No.:
IQE030N06NM5SCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

132A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-WHSON-8

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

39nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon MOSFET features an optimos 5 power transistor is designed to excel in synchronous rectification applications, offering unparalleled performance and efficiency. With a robust design and state of the ART thermal management capabilities, this power MOSFET ensures reliable operation in demanding environments. Its superior thermal resistance makes it a prime choice for various industrial applications, ensuring that your systems operate with maximum reliability and minimal power loss. Fully compliant with RoHS regulations, this component prioritises eco friendliness while maintaining exceptional functionality.

High efficiency synchronous rectification

N channel configuration for effective performance

100% avalanche reliability tested

Halogen free materials for safer disposal

Wide industrial temperature range support

Minimal on state resistance reduces power loss

RoHS compliant for environmental sustainability

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