Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1

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Subtotal (1 reel of 6000 units)*

PHP703,482.00

(exc. VAT)

PHP787,902.00

(inc. VAT)

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Units
Per Unit
Per Reel*
6000 +PHP117.247PHP703,482.00

*price indicative

RS Stock No.:
284-757
Mfr. Part No.:
IQE030N06NM5CGSCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

132A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

PG-WHTFN-9

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

39nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, RoHS, JEDEC

Automotive Standard

No

The Infineon MOSFET is a power transistor exemplifies cutting edge technology and performance, designed for efficient operation in demanding applications. Optimised for synchronous rectification, it assures superior thermal management and reliability, making it an Ideal choice for various industrial uses. Built around the OptiMOS 5 platform, it is tailored to operate effectively within a 60V range while maintaining a Compact footprint. Its robust design facilitates efficient switching, ensuring high performance while minimising losses.

Superior thermal resistance for reliability

Pb free plating for environmental compliance

100% avalanche testing for performance assurance

Exceptional gate charge for switching efficiency

Complies with halogen free standards

Ideal for rigorous industrial applications

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