Infineon OptiMOS 5 Type N, Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQDH88N06LM5CGSCATMA1

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Subtotal (1 pack of 2 units)*

PHP720.90

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PHP807.40

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 18PHP360.45PHP720.90
20 - 198PHP324.67PHP649.34
200 - 998PHP299.36PHP598.72
1000 - 1998PHP277.54PHP555.08
2000 +PHP248.74PHP497.48

*price indicative

RS Stock No.:
348-881
Mfr. Part No.:
IQDH88N06LM5CGSCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

447A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-WHTFN-9

Series

OptiMOS 5

Mount Type

Surface, Surface Mount

Pin Count

9

Maximum Drain Source Resistance Rds

0.86mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

333W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon MOSFET comes with a low RDS(on) of 0.86 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.

Reduced voltage overshoot

Increased maximum current capability

Fast switching

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