Infineon OptiMOS Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
- RS Stock No.:
- 284-945
- Mfr. Part No.:
- IQDH88N06LM5CGATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP534.13
(exc. VAT)
PHP598.226
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 100 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 18 | PHP267.065 | PHP534.13 |
| 20 - 198 | PHP240.445 | PHP480.89 |
| 200 - 998 | PHP221.685 | PHP443.37 |
| 1000 - 1998 | PHP205.535 | PHP411.07 |
| 2000 + | PHP184.155 | PHP368.31 |
*price indicative
- RS Stock No.:
- 284-945
- Mfr. Part No.:
- IQDH88N06LM5CGATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 447A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.86mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 447A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.86mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is a high performance N channel MOSFET designed to provide exceptional efficiency and reliability for industrial applications. Utilising Advanced semiconductor technology, this component delivers superior thermal management and low on resistance, making it Ideal for power conversion solutions. With its high avalanche energy rating and rigorous validation against JEDEC standards, you can Trust this product to meet stringent operational demands while maintaining safety and durability.
Optimised thermal resistance for cooling
Qualified for industrial reliability
Pb free lead plating for eco friendliness
Low gate drive requirements simplify circuits
Robust design for high drain currents
100% avalanche tested for reliability
Compact package for easy integration
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