Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1

RS Stock No.:: 284-926
Mfr. Part No.:: IQD005N04NM6CGATMA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1

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Subtotal (1 pack of 2 units)*

PHP523.66

(exc. VAT)

PHP586.50

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

100 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
2 - 18	PHP261.83	PHP523.66
20 - 198	PHP235.645	PHP471.29
200 - 998	PHP217.32	PHP434.64
1000 - 1998	PHP201.61	PHP403.22
2000 +	PHP180.665	PHP361.33

*price indicative

RS Stock No.:: 284-926
Mfr. Part No.:: IQD005N04NM6CGATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	610A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PG-TTFN-9
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	0.47mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	129nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	333W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC61249-2-21, JEDEC
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 610A
	Maximum Drain Source Voltage Vds 40V
	Package Type PG-TTFN-9
	Series OptiMOS
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 0.47mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 129nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 333W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC61249-2-21, JEDEC
	Automotive Standard No

Datasheet - IQD005N04NM6CGATMA1

The Infineon MOSFET features an OptiMOS 6 Power Transistor combines exceptional performance with robust reliability, making it a TOP choice for demanding applications. This N channel MOSFET is designed for industrial environments, providing a maximum drain source voltage of 40V and an impressive continuous drain current rating of up to 610A. This semiconductor device excels in thermal management, making it Ideal for high temperature and high power settings, facilitating a longer lifespan and consistent performance under load. With a commitment to eco friendliness, it is RoHS compliant and halogen free, aligning with modern environmental standards while offering superior engineering quality.

Outstanding thermal resistance for reliability

Robust performance in high stress environments

100% avalanche tested for safety

Exceptional efficiency for power management

Complies with environmental regulations

Minimal switching losses for high frequency operations

Compact design reduces PCB space

Easy integration into industrial systems

Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1

FREE delivery for orders over ₱3,000.00

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