Name: Infineon OptiMOS 5 Type N-Channel MOSFET, 789 A, 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1
Brand: Infineon
SKU: 348-884
Price: 340.17 PHP
Availability: OutOfStock

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	789A
	Maximum Drain Source Voltage Vds	25V
	Package Type	PG-WHSON-8
	Series	OptiMOS 5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.29mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	278W
	Maximum Gate Source Voltage Vgs	±16 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 789A
	Maximum Drain Source Voltage Vds 25V
	Package Type PG-WHSON-8
	Series OptiMOS 5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.29mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 278W
	Maximum Gate Source Voltage Vgs ±16 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - IQDH29NE2LM5SCATMA1

COO (Country of Origin):: MY

The Infineon Power MOSFET comes with industry’s lowest RDS(ON) of 0.29 mOhm combined with outstanding thermal performance for easy power loss management.

Minimized conduction losses

Fast switching

Reduced voltage overshoot

Infineon OptiMOS 5 Type N-Channel MOSFET, 789 A, 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1

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