Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 8-Pin PG-WHSON-8 IQD020N10NM5SCATMA1

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PHP798.58

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PHP894.40

(inc. VAT)

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Per Pack*
2 - 18PHP399.29PHP798.58
20 - 198PHP359.58PHP719.16
200 - 998PHP331.65PHP663.30
1000 - 1998PHP307.65PHP615.30
2000 +PHP275.795PHP551.59

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RS Stock No.:
351-912
Mfr. Part No.:
IQD020N10NM5SCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

276A

Maximum Drain Source Voltage Vds

100V

Package Type

PG-WHSON-8

Series

IQD0

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.05mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

333W

Typical Gate Charge Qg @ Vgs

107nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, RoHS, JEDEC

Height

0.75mm

Width

6 mm

Length

5mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.

Cutting edge 100 V silicon technology

Outstanding FOMs

Improved thermal performance

Ultra-low parasitic

Maximized chip or package ratio

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