Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1

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Subtotal (1 reel of 6000 units)*

PHP738,702.00

(exc. VAT)

PHP827,346.00

(inc. VAT)

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Units
Per Unit
Per Reel*
6000 +PHP123.117PHP738,702.00

*price indicative

RS Stock No.:
284-773
Mfr. Part No.:
IQE050N08NM5SCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

PG-WHSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

100W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

35nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon MOSFET features an OptiMOS 5 Power Transistor, rated at 80V, is specifically designed to enhance the efficiency and performance of modern electronic applications. It excels in providing superior synchronous rectification, ensuring minimal energy losses and maximising overall system reliability. Thanks to its low on resistance and exceptional thermal management, this transistor is Ideal for demanding industrial applications, making it a preferred choice for engineers aiming for performance optimisation. With extensive avalanche testing and robust construction, it promises longevity in severe environments and aligns with global RoHS standards, ensuring a strong commitment to safety and sustainability.

Optimised for synchronous rectification

N channel for easy circuit integration

Low on resistance reduces heat generation

Exceptional thermal resistance prevents overheating

100% avalanche tested for reliability

Pb free lead plating for eco friendly manufacturing

Halogen free construction meets regulations

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