Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1

RS Stock No.:: 284-755
Mfr. Part No.:: IQE022N06LM5SCATMA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

PHP812.55

(exc. VAT)

PHP910.05

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

100 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
5 - 45	PHP162.51	PHP812.55
50 - 95	PHP154.306	PHP771.53
100 - 495	PHP142.96	PHP714.80
500 - 995	PHP131.614	PHP658.07
1000 +	PHP126.726	PHP633.63

*price indicative

RS Stock No.:: 284-755
Mfr. Part No.:: IQE022N06LM5SCATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	151A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PG-WHSON-8
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.2mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	100W
	Typical Gate Charge Qg @ Vgs	26nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, JEDEC, IEC61249-2-21
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 151A
	Maximum Drain Source Voltage Vds 60V
	Package Type PG-WHSON-8
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.2mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 100W
	Typical Gate Charge Qg @ Vgs 26nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, JEDEC, IEC61249-2-21
	Automotive Standard No

Datasheet - IQE022N06LM5SCATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is a highly efficient MOSFET designed to meet the demands of Advanced power management applications. With a power dissipation capacity that allows it to operate reliably under intense conditions, this power transistor ensures optimal efficiency and thermal management. Its Pb free and RoHS compliant construction endorses its usability in eco sensitive applications, while also being halogen free, enhancing its adaptability across various sectors. Fully qualified according to JEDEC standards for industrial applications, it is a trusted component for engineers seeking reliable, high performance solutions.

Optimised for power management

Supports synchronous rectification in SMPS

N channel with logic level compatibility

Very low on resistance for thermal performance

Superior thermal resistance for reliability

100% avalanche tested for operational assurance

Complies with environmental regulations

Comprehensive validation for industrial use

Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1

FREE delivery for orders over ₱3,000.00

Related links